| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 12V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 4.5V |
| 集电极连续输出电流ICCollector Current(IC) | 35mA |
| 截止频率fTTranstion Frequency(fT) | 24GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~140 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 100mW/0.1W |
| Description & Applications | Silicon NPN Epitaxial High Frequency Low Noise Amplifier Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz |
| 描述与应用 | NPN硅外延 高频低噪声放大器 特点 •高增益带宽积 的fT =24 GHz的典型。 •高功率增益和低噪声系数; PG=18 dB。 NF=1.2 dB典型值。f =1.8 GHz时 |