| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 6V |
| 集电极连续输出电流ICCollector Current(IC) | 35mA |
| 截止频率fTTranstion Frequency(fT) | 13.5Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~120 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • High-gain transistor for buffer amplifier : |S21e|*2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0” (Ultra High Speed Process) technology adopted • Flat-lead 3-pin thin-type ultra super minimold package |
| 描述与应用 | NPN硅RF晶体管 扁平引线3引脚超薄型超超迷你模具 特点 •高增益缓冲放大器晶体管：| S21E| *2 @ VCE= 1 V，IC=10.0 dB。=5毫安，F =2吉赫 •英尺= 25 GHz的的“UHS0”（超高速处理）技术通过 •扁平引线3引脚薄型超迷你型包装 |