| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 3.3V |
| 集电极连续输出电流ICCollector Current(IC) | 35mA |
| 截止频率fTTranstion Frequency(fT) | 21GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~100 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 115mW/0.115W |
| Description & Applications | NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES • Suitable for high-frequency oscillation • fT= 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package |
| 描述与应用 | NPN硅RF晶体管 低噪声·高增益放大 3-PIN超迷你型（19，1608 PKG） 特点 •适用于高频振荡 •fT= 25 GHz技术通过 •3引脚超级迷你型（19，1608封装）封装 |