| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 30V |
| 集电极连续输出电流ICCollector Current(IC) | 20mA |
| 截止频率fTTranstion Frequency(fT) | 550MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 40~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | <200mV/0.2V |
| 耗散功率PcPower Dissipation | 100mW/0.1W |
| Description & Applications | Features • NPN Epitaxial Planar Silicon Transistor • High Frequency Amplifier Applications FM, RF, MIX, If Amplifier Applications • Small reverse transfer capacitance: Cre = 0.55 pF (typ.) • Low noise figure: NF = 2.3dB (typ.) |
| 描述与应用 | 特点 •NPN平面外延硅晶体管 •高频率放大器应用FM，RF，MIX，如果放大器的应用 •小反向传输电容：CRE= 0.55 PF（典型值） •低噪声系数：NF=2.3分贝（典型值） |