| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流ICCollector Current(IC) |
150mA/0.15A |
| 截止频率fTTranstion Frequency(fT) |
80MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
200~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
100mV/0.1V |
| 耗散功率PcPower Dissipation |
200mW/0.2W |
| Description & Applications |
Features • TRANSISTOR SILICON NPN EPITAXIAL TYPE(PCT PROCESS) • AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER AMPLICATIONS • Small Package • High Voltage AND HIGH CURRENT • High HFE • EXCELLENT HFE LINEARITY • COMPLEMENTARY TO 2SA1873 |
| 描述与应用 |
特点 •晶体管的硅NPN外延式（PCT程序） •音频频率通用放大器AMPLICATIONS的 •小包装 •高电压和大电流 •高HFE •优秀的HFE线性 •互补2SA1873 |