| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 8V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 11GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | Silicon NPN Epitaxial Features •High gain bandwidth product fT = 11 GHz Typ •High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application •VHF / UHF wide band amplifier |
| 描述与应用 | NPN硅外延 特点 •高增益带宽乘积fT=11 GHz的典型 •高增益，低噪声系数，PG=16.5 dB（典型值），NF= 1.1 dB（典型值）在f=900兆赫 应用 •VHF / UHF宽频带放大器 |