HB2301W P 沟道场效应管 20V 1.8A SOT323 代码 JJ1 1.8 v驱动 低导通电阻
| 最大源漏极电压Vds Drain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
8V |
| 最大漏极电流Id Drain Current |
1.8A |
| 源漏极导通电阻Rds Drain-Source On-State |
Ron = 363mΩ (max) (@VGS = −1.8 V)
Ron = 230mΩ (max) (@VGS = −2.5 V)
Ron = 158mΩ (max) (@VGS = −4.0 V)
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| 开启电压Vgs（th） Gate-Source Threshold Voltage |
|
| 耗散功率Pd Power dissipation |
500MW/0.5W |
| 描述与应用 Description & Applications |
硅p沟道MOS场效应晶体管类型
高速开关应用
1.8 v驱动
低导通电阻:
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| 规格书PDF |
