CMPT5401 三极管PNP -160V -0.5A 300MHZ HEF=60~240 SOT23 代码 C2L
| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -160V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −150V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 100~300MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~240 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 350mW/0.35W |
| Description & Applications | PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5086, CMPT5087 types are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and low noise |
| 描述与应用 | PNP硅晶体管 产品描述： 中央半导体CMPT5086，CMPT5087类型PNP硅 由外延平面工艺制造的晶体管，环氧树脂模制在一个表面 安装包，专为需要高增益和低噪声的应用 |
| 规格书PDF |
