S4X8BSRP
| 反向重复峰值电压VRRM/断态重复峰值电压VDRMRepetitive peak reverse voltage/Repetitive peak off-state voltage | 400V-800V |
| 通态平均电流IT(AV)Average on-state current | 0.51A |
| 通态最大电流IT(RMS)RMS on-state current | 0.8A |
| 栅极触发电压VGTGate trigger voltage | 0.8V |
| 栅极触发电流IGTGate trigger current | 5μA-200μA |
| 保持电流IHHolding current | 5mA |
| 峰值通态电压VTMOn-state voltage | 1.7V |
| 重复峰值断态电流IDRMRepetitive peak off-state current | 3μA |
| 浪涌电流ITSM(50Hz、60Hz)Current - Non Rep. Surge 50, 60Hz (Itsm) | 8A |
| Description & Applications | RoHS compliant and Halogen-Free Thru-hole and surface mount packages Surge current capability > 10Amps Blocking voltage ( VDRM / VRRM ) capability - up to 800V High dv/dt noise immunity Improved turn-off time (tq) < 25 μsec Sensitive gate for direct microprocessor interface |
| 描述与应用 | 符合RoHS标准，不含卤素 通孔和表面贴装封装 浪涌电流能力>10安培 阻断电压（VDRM/ VRRM)能力高达800伏特 高噪声免疫力 改进的关断时间（TQ）<25微秒 敏感栅直接微处理器接口 |
| 规格书PDF |
