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SSM6P40TU 复合场效应管 -30V 0 SOT-363/SC70-6/UF6 marking/标记 PP2 高速开关

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最大源漏极电压VdsDrain-Source Voltage-30V
最大栅源极电压Vgs(±)Gate-Source Voltage20V
最大漏极电流IdDrain Current0
源漏极导通电阻RdsDrain-Source On-State Resistance226mΩ@ VGS = -10V, ID = -1000mA
开启电压Vgs(th)Gate-Source Threshold Voltage-0.8~-2.0V
耗散功率PdPower Dissipation500mW/0.5W
Description & ApplicationsTOSHIBA Field-Effect Transistor Silicon P Channel MOS Type ○ Power Management Switch Applications ○ High-Speed Switching Applications • 4.0 V drive • P-ch, 2-in-1 • Low ON-resistance: Ron = 403mΩ (max) (@VGS = –4 V) Ron = 226mΩ (max) (@VGS = –10 V)
描述与应用TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type ○ Power Management Switch Applications ○ High-Speed Switching Applications • 4.0 V drive • P-ch, 2-in-1 • Low ON-resistance: Ron = 403mΩ (max) (@VGS = –4 V) Ron = 226mΩ (max) (@VGS = –10 V)
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