ME2302 N沟道MOSFET 20V 2.8A SOT-23/SC-59 marking/标记 I19RY1 超低导通电阻
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 2.8A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.085Ω/Ohm 22.5A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6-1.2V |
| 耗散功率Pd Power Dissipation | 1.25W |
| Description & Applications | Standard Mini SMD LED DESCRIPTION The new MiniLED series have been designed in a small white SMT package. The feature of the device is the very small package 2.3 mm x 1.3 mm x 1.4 mm. The MiniLED is an obvious solution for small-scale, high-power products that are expected to work reliability in an arduous environment. This is often the case in automotive and industrial application. RDS(ON)≦85mΩ@VGS=4.5V RDS(ON)≦115mΩ@VGS=2.5V RDS(ON)≦135mΩ@VGS=1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability |
| 描述与应用 | 标准迷你型SMD LED 说明 已经设计了一个白色的小新MiniLED系列 SMT封装。该设备的特点是非常小 包2.3毫米×1.3毫米×1.4毫米。该MiniLED是 小规模，高功率产品，显而易见的解决方案 预计在艰苦环境中工作的可靠性。 这通常是在汽车和工业应用的情况下。 超高密度电池设计极低的RD（ON） 卓越的导通电阻和最大DC电流能力 |
| 规格书PDF |
