我的订单
分享到:
当前位置:首页 > 现货库存 > 商品详情

FDS6690A N沟道MOSFET 30V 11A 8-SOIC marking/标记 FDS6690A 低漏源导通电阻

热销商品

产品描述
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current11A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance17mΩ@ VGS = 4.5V, ID =10A
开启电压Vgs(th) Gate-Source Threshold Voltage1~3V
耗散功率Pd Power Dissipation2.5W
Description & ApplicationsSingle N-Channel, Logic Level, Power Trench MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability
描述与应用单N沟道逻辑电平功率沟槽MOSFET 概述 这N沟道逻辑电平MOSFET采用飞兆半导体先进的功率沟槽进程,已特别是针对减少通态电阻,同时保持出色的开关性能。 这些器件非常适合于低电压和电池供电应用的低线的功率损耗和快速开关是必需的。 特点 •开关速度快 •低栅极电荷 •高性能沟道技术极低的RDS(ON) •高功率和电流处理能力
规格书PDF
相关型号列表

备案/许可证号:粤ICP备14038557号 Copyright ©: 2017 爱瑞凯电子商城版权所有 并保留所有权利
客服电话0755-88869068
工作时间:周一至周六 8:00~22:00