SI3433DV-T1-E3 P沟道MOS场效应管 -20V -4.3A 80毫欧 SOT-163 marking/标记 3A
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -8V |
| 最大漏极电流IdDrain Current | -4.3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 80mΩ@ VGS = -1.8V, ID = -1A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.45V |
| 耗散功率PdPower Dissipation | 1.1W |
| Description & Applications | P-Channel 1.8-V (G-S) MOSFET |
| 描述与应用 | P沟道1.8-V（G-S）的MOSFET |
| 规格书PDF |
