SI5445DC-T1 P沟道MOS场效应管 -8V 7.1A 0.030ohm Vth:-0.45V 1206-8 marking/标记 BC
最大源漏极电压VdsDrain-Source Voltage | -8V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
最大漏极电流IdDrain Current | -7100mA/-0.1A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 0.030Ω @-5.2A,-4.5V |
开启电压Vgs(th)Gate-Source Threshold Voltage | -0.45V |
耗散功率PdPower Dissipation | 2.5W |
Description & Applications | P-Channel 1.8-V (G-S) MOSFET |
描述与应用 | P沟道1.8-V(G-S)的MOSFET |
规格书PDF |