SI3495DV P沟道MOS场效应管 -20V -7A 0.020ohm SOT-163 marking/标记 95P 功率MOSFET 超低导通电阻
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -7A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.020Ω @-7A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.35V-0.75V |
| 耗散功率PdPower Dissipation | 2W |
| Description & Applications | FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated • Ultra-Low On-Resistance • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC |
| 描述与应用 | •根据IEC 61249-2-21的无卤素 定义 •的TrenchFET 功率MOSFET：1.5 V额定 •超低导通电阻 •100％的Rg 测试 •符合RoHS指令2002/95/EC |
| 规格书PDF |
