BUK481-100A N沟道MOSFET 100V 1A SOT-223/SC-73/TO261-4 marking/标记 41-10A 密度电池设计极低的RDS
| 最大源漏极电压Vds Drain-Source Voltage | 100V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
| 最大漏极电流Id Drain Current | 1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.80Ω/Ohm @1A10v, |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2.1-4.0V |
| 耗散功率Pd Power Dissipation | 1.5W |
| Description & Applications | N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in Ptot Total power dissipation 1.5 W automotive and general purpose Tj Junction temperature 150 ˚C switching applications |
| 描述与应用 | 功率MOS晶体管 逻辑电平TOPFET N沟道增强型场效应功率晶体管在 塑料信封适合表面贴装应用。该设备是为了在P合计使用 总功耗为1.5 W 汽车和通用TJ 结温150˚C 开关应用 |
| 规格书PDF |
