UP0431400L NPN+PNP复合三极管 50V/-50V 100mA/-100mA 80 SOT-563 标记CA 用于开关/数字电路
| Q1 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| Q1集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| Q1集电极连续输出电流IC Collector Current(IC) | 100MA/0.1A |
| Q2 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| Q2集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| Q2集电极连续输出电流IC Collector Current(IC) | -100MA/-0.1A |
| Q1基极输入电阻R1 Input Resistance(R1) | 10KΩ |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 0.21 |
| Q2基极输入电阻R1 Input Resistance(R1) | 10KΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 0.21 |
| 直流电流增益hFE DC Current Gain(hFE) Q1/Q2 | 80/80 |
| 截止频率fT Transtion Frequency(fT) Q1/Q2 | 150MHZ/80MHZ |
| 耗散功率Pc Power Dissipation | 125MW/0.125W |
| Description & Applications |
For switching/digital circuits
* Features
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
* Basic Part Number
• UNR2214 + UNR2114
|
| 描述与应用 |
NPN型硅外延平面类型(Tr1)
PNP型硅外延平面类型(Tr2)
开关/数字电路
*功能
两个元素纳入一个包
(晶体管内置电阻)
减少一半的安装面积和组装成本
*基本零件号
UNR2214 + UNR2114
|
| 规格书PDF |
