2SJ508 P沟道MOS场效应管 -100V -1A 1.9ohm SOT-89 marking/标记 ZE 高速开关
| 最大源漏极电压VdsDrain-Source Voltage | -100V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -1A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 1.9Ω @-500mA,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.8--2.0V |
| 耗散功率PdPower Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 4V gate drive low drain-source on resistance high forward transfer admittance low leakage current enhancement mode |
| 描述与应用 | 东芝场效应晶体管的硅P沟道MOS型 4V栅极驱动 低漏源电阻 高正向转移导纳 低漏电流 增强模式 |
| 规格书PDF |
