FDG326P P沟道MOS场效应管 -20V -1.5A 0.105ohm SOT-363 marking/标记 26
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -1.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.105Ω @-1.5A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.4--1.5V |
| 耗散功率PdPower Dissipation | 750mW/0.75W |
| Description & Applications | • Low gate charge (3.5nC typical). • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package. |
| 描述与应用 | •低栅极电荷（3.5nC典型值） •高性能沟道技术极低的RDS（ON） •紧凑型工业标准SC70-6表面贴装封装 |
| 规格书PDF |
