2SJ302-Z-E1 P沟道MOS场效应管 -60V 16A 0.1ohm SOT-263 marking/标记 J302 低导通电阻
最大源漏极电压VdsDrain-Source Voltage | -60V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 10V |
最大漏极电流IdDrain Current | -16A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 0.1Ω @-8A,-10V |
开启电压Vgs(th)Gate-Source Threshold Voltage | -1.0--2.0V |
耗散功率PdPower Dissipation | 75W |
Description & Applications | Low ON resistance |
描述与应用 | 低导通电阻 |
规格书PDF |