FDC658P P沟道MOS场效应管 -30V -4A 0.041ohm SOT-163 marking/标记 658
| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -4A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.041Ω @-4A,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1--3V |
| 耗散功率PdPower Dissipation | 1.6W |
| Description & Applications | • Rugged gate rating (±12V). • High performance trench technology for extremely low RDS(ON) • SuperSOT TM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). |
| 描述与应用 | •坚固的门评级（±12V）。 •高性能沟道技术极低的RDS（ON） •的SuperSOT TM-6包装：占地面积小（小72％ 比标准的SO-8）;低调（1mm厚） |
| 规格书PDF |
