SI3911DV-T3-E3 复合场效应管 -20V -1.8A SOT-163/SOT23-6/TSOP-6 marking/标记 11
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -8V |
| 最大漏极电流IdDrain Current | -1.8A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 300mΩ@ VGS = -1.8V, ID = -1A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.45V |
| 耗散功率PdPower Dissipation | 830mW/0.83W |
| Description & Applications | Dual P-Channel 20-V (D-S) MOSFET |
| 描述与应用 | 双P沟道20-V（D-S）的MOSFET |
| 规格书PDF |
