2SK848-TD N沟道MOSFET 250V 500mA/0.5A SOT-89 marking/标记 KA 高速开关/低导通电阻
| 最大源漏极电压Vds Drain-Source Voltage | 250V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 500mA/0.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 6Ω/Ohm @250mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-2.5V |
| 耗散功率Pd Power Dissipation | 1.5W |
| Description & Applications | Very speed switching application Features Silicon N-Channel POWER MOS FET Very high-speed switching applications Low on resistance,very high-speed switching |
| 描述与应用 | 非常高速开关应用 特性 硅N沟道功率MOS FET 非常高速开关应用 低导通电阻，非常高的速度开关 |
| 规格书PDF |
