SI1900DL-T1-E3 复合场效应管 30V 590mA/0.59A SOT-363/SC70-6 marking/标记 PBS
| 最大源漏极电压VdsDrain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 590mA/0.59A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 700mΩ@ VGS =4.5V, ID =200mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1V |
| 耗散功率PdPower Dissipation | 270mW/0.27W |
| Description & Applications | Dual N-Channel 30-V (D-S) MOSFET |
| 描述与应用 | 双N沟道30-V（D-S）的MOSFET |
| 规格书PDF |
