XP162A11C0PR P沟道MOS场效应管 -30V -2.5A 0.11ohm SOT-89 marking/标记 211 超高速开关 低导通电阻 内置栅极保护二极管
最大源漏极电压VdsDrain-Source Voltage | -30V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
最大漏极电流IdDrain Current | -2.5A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 0.11Ω @1.5A,10V |
开启电压Vgs(th)Gate-Source Threshold Voltage | -1.0--2.5V |
耗散功率PdPower Dissipation | 2W |
Description & Applications | FEATURES Low On-State Resistance : Rds(on) = 0.15Ω@ Vgs = -10V Rds(on) = 0.28Ω@ Vgs = -4.5V Ultra High-Speed Switching Driving Voltage : -4.5V Gate Protect Diode Built-in P-Channel Power MOSFET DMOS Structure Small Package |
描述与应用 | 低导通电阻:RDS(ON)=0.15Ω@ VGS=-10V 的Rds(on)=0.28Ω@ VGS=-4.5V 超高速开关 驱动电压:-4.5V 内置栅极保护二极管 P沟道功率MOSFET DMOS结构式 小包装 |
规格书PDF |