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XP151A12A2MR N沟道MOSFET 20V 1A SOT-23/SC-59 marking/标记 112 高速开关/低导通电阻

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产品描述
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage12V
最大漏极电流Id Drain Current1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.1Ω/Ohm @500mA,4.5V
开启电压Vgs(th) Gate-Source Threshold Voltage0.7-1.4V
耗散功率Pd Power Dissipation500mW/0.5W
Description & ApplicationsFEATURES Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V Rds(on) = 0.16Ω@ Vgs = 2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 2.5V N-Channel Power MOSFET DMOS Structure Small Package
描述与应用FEATURES Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V Rds(on) = 0.16Ω@ Vgs = 2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 2.5V N-Channel Power MOSFET DMOS Structure Small Package
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