VEC2901 FET+BJT复合场效应管 30V 100V marking/标记 AA SOT-183
最大源漏极电压VdsDrain-Source Voltage | MOSFET N-Channel |
最大栅源极电压Vgs(±)Gate-Source Voltage | 30V |
最大漏极电流IdDrain Current | 10V |
源漏极导通电阻RdsDrain-Source On-State Resistance | 150mA/1.5A |
开启电压Vgs(th)Gate-Source Threshold Voltage | 3700mΩ@ VGS = 4V, ID = 80mA |
耗散功率PdPower Dissipation | 220ms@VDS=10V,Id=80mA |
Description & Applications | |
描述与应用 | 0.4~1.3V |
规格书PDF |