US5U1 复合场效应管MOSFET+肖特基二极管 30V 1.5A 500mA/0.5A 0.47V SOT-353/SC70-5/TUMT5 marking/标记 U01 高速开关/低导通电阻/低驱动电压
最大源漏极电压VdsDrain-Source Voltage | N沟道 N-Channel |
最大栅源极电压Vgs(±)Gate-Source Voltage | 30V |
最大漏极电流IdDrain Current | 12V |
源漏极导通电阻RdsDrain-Source On-State Resistance | 1.5A |
开启电压Vgs(th)Gate-Source Threshold Voltage | 240mΩ@ VGS = 4.5V, ID = 1.5A |
耗散功率PdPower Dissipation | 0.5~1.5V |
Description & Applications | 肖特基二极管SBD Schottky Barrier Diodes |
描述与应用 | 20V |
规格书PDF |