TPCP8J01 FET+BJT复合场效应管 -32V 50V marking/标记 8J01 ps-8
| 最大源漏极电压VdsDrain-Source Voltage | MOSFET P-Channel |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -32V |
| 最大漏极电流IdDrain Current | 20V |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | -5.5A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 35mΩ@ VGS = -10V, ID = -3000mA |
| 耗散功率PdPower Dissipation | 9.6s@VDS=-10V，Id=-3A |
| Description & Applications | |
| 描述与应用 | -0.8~-2.0V |
| 规格书PDF |
