STS2307 P沟道MOS场效应管 -20V -3A 0.07ohm SOT-23 marking/标记 S07 低导通电阻
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | -3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.07Ω @-4A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.5--1.5V |
| 耗散功率PdPower Dissipation | 1.25W |
| Description & Applications | F E ATUR E S S uper high dense cell design for low R DS (ON). R ugged and reliable. S OT-23 package. |
| 描述与应用 | F E ATUR E S ŞUPER高密度电池设计低R DS ŗugged可靠。 S OT-23封装 |
| 规格书PDF |
