SI2305DS P沟道MOS场效应管 -8V -3.5A 0.044ohm SOT-23 marking/标记 A5
| 最大源漏极电压VdsDrain-Source Voltage | -8V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -3.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.044Ω @-3.5A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.45V |
| 耗散功率PdPower Dissipation | 1.25W |
| Description & Applications | P-Channel 1.25-W, 1.8-V (G-S) MOSFET |
| 描述与应用 | P沟道1.25-W，1.8 V（G-S）的MOSFET |
| 规格书PDF |
