RN46A1 NPN+PNP复合带阻尼三极管 -50V/50V -100mA/100mA 70/50 300mW/0.3W SOT-163/SM6/SOT23-6 标记11 开关电路 逆变器 接口电路 驱动电路
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V/50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V/50V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/100mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 22KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 22KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 1 |
| Q2基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 70/50 |
| 截止频率fT Transtion Frequency(fT) | 200MHz/250MHz |
| 耗散功率Pc Power Dissipation | 300mW/0.3W |
| Description & Applications | Features •TOSHIBA Transistor Silicon PNP·NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) •Two devices are incorporated into an Super-Mini (6 pin) package. •Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Applications •Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
| 描述与应用 | 特点 •东芝硅PNP晶体管NPN外延型（PCT进程）（偏置电阻晶体管） •两个设备都纳入一个超小型封装（6针）。 •将偏置电阻晶体管，减少了部件数量。减少零件数，使制造比以往更紧凑的设备和装配成本。 应用 •开关，逆变电路，接口电路和驱动器电路应用。 |
| 规格书PDF |
