PBSS2540F NPN三极管 40V 500mA/0.5A 450MHz 100 50mV~200mV SOT-523 marking/标记 2C
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 40V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 40V |
集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
截止频率fTTranstion Frequency(fT) | 450MHz |
直流电流增益hFEDC Current Gain(hFE) | 100 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 50mV~200mV |
耗散功率PcPower Dissipation | 250mW/0.25W |
Description & Applications | 40 V low VCEsat NPN transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Improved thermal behaviour due to flat leads • Enhanced performance over SOT23 general purpose transistors. APPLICATIONS • General purpose switching and muting • Low frequency driver circuits • Audio frequency general purpose amplifier applications • Battery driven equipment (mobile phones, video cameras, hand-held devices). DESCRIPTION NPN low VCEsat transistor in a SC-89 (SOT490) plasticpackage. |
描述与应用 | 40 V低VCEsat NPN晶体管 特点 •低集电极 - 发射极饱和电压 •高电流能力 •改进的热行为由于平坦的线索, •增强的性能超过SOT23通用 晶体管。 应用 •通用开关和静音 •低频驱动电路 •音频通用放大器应用 •电池驱动设备(移动电话,视频 相机,手持设备)。 说明 NPN低VCEsat 在SC-89(SOT490)塑料晶体管包。 |
规格书PDF |