NTR4502PT1G P沟道MOS场效应管 -30V -1950mA 0.165ohm SOT-23 marking/标记 TR 快速开关 低导通电阻 低传导损耗
| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -1.95A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.165Ω @-1.95A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.0--3V |
| 耗散功率PdPower Dissipation | 1.25W |
| Description & Applications | Features • Leading Planar Technology for Low Gate Charge / Fast Switching • Low RDS(ON) for Low Conduction Losses • SOT−23 Surface Mount for Small Footprint (3 X 3 mm) • Pb−Free Packages are Available |
| 描述与应用 | •领先的平面技术，低栅极电荷/快速切换 •低RDS（ON） 低传导损耗 •SOT-23表面贴装小尺寸（3×3毫米） •无铅包可用 |
| 规格书PDF |
