我的订单
分享到:
当前位置:首页 > 现货库存 > 商品详情

NDT3055 N沟道MOSFET 60V 4A SOT-223/SC-73/TO261-4 marking/标记 3055

热销商品

产品描述
最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current4A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.1Ω/Ohm @4A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage2-4V
耗散功率Pd Power Dissipation3W
Description & ApplicationsN-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. N-Channel Enhancement Mode Field Effect Transistor High density cell design for extremely low RDS(ON) .High power and current handling capability in a widely used surface mount package
描述与应用N沟道增强型场效应晶体管 概述 这些N沟道增强型功率场效应 晶体管都采用飞兆半导体专有的生产, 高密度,DMOS技术。这非常高 密度工艺特别是针对减少 通态电阻和提供优越的开关 性能。这些器件特别适合于 低电压应用,如DC电机控制和 DC/ DC转换的快速开关,低线 的功率损耗,以及抗瞬变是必要的。 高密度电池设计极低的RDS(ON) 一种广泛使用的高功率和电流处理能力 表面贴装封装
规格书PDF
相关型号列表

备案/许可证号:粤ICP备14038557号  技术支持: 奇点网络 Copyright ©: 2017 爱瑞凯电子商城版权所有 并保留所有权利
客服电话0755-88869068
工作时间:周一至周六 8:00~22:00