NDS351AN N沟道MOSFET 30V 1.2A SOT-23/SC-59 marking/标记 351A 高密度电池设计/良好导通电阻/最大DC电流能力
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 1.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.16Ω/Ohm @1.4A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-2V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | N-Channel, Logic Level, PowerTrench ÒMOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Industry standard outline SOT-23 surface mount package using proprietary SuperSOT TM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON).Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface mount |
| 描述与应用 | N沟道逻辑电平，的PowerTrenchÒMOSFET的 概述 这些N沟道逻辑电平MOSFET产生 采用飞兆半导体先进的 PowerTrench进程，已特别定制 最大限度地减少通态电阻，但维持 优越的开关性能。 这些器件特别适用于低电压 应用在笔记本电脑，手提电话， PCMCIA卡，和其它电池供电的电路 的快速开关，低线的功率损耗 需要在一个非常小外形表面贴装封装。 行业标准外形SOT-23表面贴装封装 使用专有SuperSOT 设计卓越的TM-3 热性能和电气性能。 高密度电池设计极低的RDS（ON） 卓越的导通电阻和最大DC电流能力。 紧凑型工业标准SOT-23表面贴装 |
| 规格书PDF |
