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MMBR571LT1 NPN三极管 20V 80mA 8Ghz 50~300 SOT-23/SC-59 marking/标记 7X 低噪声高频三极管

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产品描述
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)20V
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)10V
集电极连续输出电流ICCollector Current(IC)80mA
截止频率fTTranstion Frequency(fT)8Ghz
直流电流增益hFEDC Current Gain(hFE)50~300
管压降VCE(sat)Collector-Emitter Saturation Voltage
耗散功率PcPower Dissipation
Description & ApplicationsThe RF Line NPN Silicon High-Frequency TRANSISTOR Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This Motorola series of small–signal plastic transistors offers superior quality and performance at low cost. • High Gain–Bandwidth Product fT = 8.0 GHz (Typ) @ 50 mA • Low Noise Figure NFmin = 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571) • High Gain GNF = 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1) • High Power Gain Gpe (matched) = 13.5 dB (Typ) (MRF5711LT1) • State–of–the–Art Technology Fine Line Geometry Ion–Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel
描述与应用RF线NPN硅 高频三极管 专为低噪声,宽动态范围前端放大器 低噪声VCO。可在一个表面贴装塑料封装。这 摩托罗拉系列小信号塑料晶体管提供卓越的品质和 以较低的成本性能。
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