MGSF3433VT1 P沟道MOS场效应管 -20V -5.6A 34毫欧 SOT-163 marking/标记 3T
最大源漏极电压VdsDrain-Source Voltage | -20V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
最大漏极电流IdDrain Current | -5.6A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 34mΩ@ VGS = -4.5V, ID = -5.6A |
开启电压Vgs(th)Gate-Source Threshold Voltage | -0.45V~-0.85V |
耗散功率PdPower Dissipation | 2W |
Description & Applications | P-Channel 1.8-V (G-S) MOSFET |
描述与应用 | P沟道1.8-V(G-S)的MOSFET |