IRF6618TR1 N沟道MOSFET 30V 170A MT marking/标记 低栅极电荷/高速开关/极低的RDS
最大源漏极电压Vds Drain-Source Voltage | 30V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | 170A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.002Ω/Ohm @30A,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 1.35V-2.35V |
耗散功率Pd Power Dissipation | 2.8W |
Description & Applications | HEXFETPower MOSFET Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount echniques |
描述与应用 | HEXFET功率MOSFET 特殊应用的MOSFET 非常适于CPU核心的DC-DC转换器 低传导损耗 低开关损耗 薄型(<0.7毫米) 双面冷却双兼容 与现有的表面贴装echniques的兼容 |
规格书PDF |