GN01010NQTD MESFET-N沟道 6V 15mA-30mA SOT-143 marking/标记 5AQ 高频应用/低噪音
| 最大源漏极电压VdsDrain-Source Voltage | 6V |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -4V |
| 漏极电流(Vgs=0V)IDSSDrain Current | 15mA-30mA |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | |
| 耗散功率PdPower Dissipation | 200mW/0.2W |
| Description & Applications | GaAs MMICs. GaAs N-Channel MES IC. For high-output high-gain amplification. Features * General-use wide-band amplifier * Low noise * With bandwidth control pin |
| 描述与应用 | 砷化镓MMIC的。 N沟道MES砷化镓IC。 对于高输出高增益放大。 特点 *一般使用宽带放大器 *低噪音 *随着带宽控制引脚 |
| 规格书PDF |
