BSH207 P沟道MOS场效应管 -12V -152mA 0.08ohm SOT-163 marking/标记 A1 低开启电压 快速开关
| 最大源漏极电压VdsDrain-Source Voltage | -12V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -0.152A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.08Ω @-1A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | |
| 耗散功率PdPower Dissipation | 417mW/0.417W |
| Description & Applications | • Low threshold voltage VDS = -30 V • Fast switching • Logic level compatible ID = -0.52 A • Subminiature surface mountpackage |
| 描述与应用 | •低阈值电压VDS=-30 V •快速开关 •逻辑电平兼容ID=-0.52 •表面mountpackage微型 |
| 规格书PDF |
