BFR92AW NPN三极管 20V 25mA 5GHz 90 SOT-323/SC-70 marking/标记 P2 混频器和振荡器
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流ICCollector Current(IC) | 25mA |
截止频率fTTranstion Frequency(fT) | 5GHz |
直流电流增益hFEDC Current Gain(hFE) | 90 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | |
耗散功率PcPower Dissipation | 300mW/0.3W |
Description & Applications | NPN 5 GHz wideband transistor FEATURES • High power gain • Gold metallization ensures excellent reliability • SOT323 (S-mini) package. APPLICATIONS It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. |
描述与应用 | 5 GHz的宽带晶体管NPN 特点 •高功率增益 •黄金金属确保卓越的可靠性 •SOT323(S-迷你)封装。 应用 它是专为在RF放大器中使用 混频器和振荡器信号 高达1 GHz的频率。 |
规格书PDF |