BF1201R N沟道MOSFET 10V 30mA SOT-143 marking/标记 LB 低噪声增益控制放大器/VHF和UHF应用
| 最大源漏极电压Vds Drain-Source Voltage | 10V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | 30mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.3-1.0/0.3-1.2V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. |
| 描述与应用 | 短沟道晶体管高 正向转移导纳输入 电容比 低噪声增益控制放大器 晴内部自偏置电路 确保良好的交叉调制 在AGC和良好的性能 DC稳定 |
| 规格书PDF |
