2SK880-GR N沟道结型场效应管 50v 2.6~6.5mA SOT-323 marking/标记 XG radio 频率低噪声放大器
| 最大源漏极电压VdsDrain-Source Voltage | 50v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -50v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 2.6~6.5ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.2~-1.5v |
| 耗散功率PdPower Dissipation | 100mW/0.1W |
| Description & Applications | •Field Effect Transistor Silicon N Channel Junction Type •Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ • High input impedance: IGSS = −1 nA (max) at VGS = −30 V |
| 描述与应用 | •场效应晶体管的硅N沟道结型 •音频频率低噪声放大器的应用 •高| YFS|：| YFS|= 15毫秒（典型值），在VDS=10V，VGS=0 •高击穿电压：VGDS=-50 V •低噪音：NF=1.0分贝（典型值） 在VDS= 10 V，ID=0.5毫安，F=1千赫，RG=1kΩ的 •高输入阻抗：IGSS= -1娜在VGS=-30 V（最大值） |
| 规格书PDF |
