2SK3980 N沟道MOSFET 60V 900mA/0.9A SOT-89 marking/标记 LS 低导通电阻/高速开关
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 900mA/0.9A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.635Ω/Ohm @500mA,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4-1.3V |
| 耗散功率Pd Power Dissipation | 900mW/0.9W |
| Description & Applications | N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features General-Purpose Switching Device Applications Low ON-resistance Ultrahigh-speed switching 1.8V drive |
| 描述与应用 | N-沟道硅MOSFET 通用开关设备应用 特性 通用开关设备应用 低导通电阻 超高速开关 1.8V驱动 |
| 规格书PDF |
