2SJ195 P沟道MOS场效应管 -60V 1.5A 0.9ohm SOT-252 marking/标记 J195 高速开关
| 最大源漏极电压VdsDrain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -1.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.9Ω @-500mA,-4V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -2.1--3.0V |
| 耗散功率PdPower Dissipation | 2W |
| Description & Applications | p-channel mos silicon fet very high-speed switching applications Low on resistance very high-speed switching Low-voltage drive |
| 描述与应用 | p沟道MOS场效应晶体管硅 非常高速的开关应用 低导通电阻 非常高速开关 低电压驱动 |
| 规格书PDF |
