2SJ166 P沟道MOS场效应管 -50V 100mA/0.1A 50ohm SOT-23 marking/标记 H11 高速开关
| 最大源漏极电压VdsDrain-Source Voltage | -50V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 7V |
| 最大漏极电流IdDrain Current | -100mA/-0.1A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 50Ω @-20mA,-4V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.0--3.0V |
| 耗散功率PdPower Dissipation | 200mW/0.2W |
| Description & Applications | MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING Directly driven by the output of ICs having a 5V power source Not necessary to consider driving current because of its high input impedance Possible to reduce the number of parts by omitting the bias resistor Complementary to 2SK1132 |
| 描述与应用 | MOS场效应晶体管 P-通道 MOS FET用于高速开关 集成电路的输出端具有5V电源直接驱动 不必考虑驱动电流，因为它的高输入阻抗 能够减少部件的数量通过省去偏置电阻 对管是2SK1132 |
| 规格书PDF |
