2SB798 PNP三极管 -30V -1A 110MHz 135~270 -250mV/-0.25V SOT-89/SC-62 marking/标记 DL 低集电极饱和电压
| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −25V |
| 集电极连续输出电流ICCollector Current(IC) | -1A |
| 截止频率fTTranstion Frequency(fT) | 110MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 135~270 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -250mV/-0.25V |
| 耗散功率PcPoWer Dissipation | 2W |
| Description & Applications | PNP silicon epitaxial transistor power mini mold low collector saturation voltage； excellent DC current gain linearity； complementary to 2SD999 |
| 描述与应用 | PNP硅外延晶体管电源小型模具 低集电极饱和电压; 优良的直流电流增益线性度; 2SD999互补 |
| 规格书PDF |
