| 最大源漏极电压VdsDrain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 115mA/0.115A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 7.5Ω@ VGS = 4.5V,ID = 75mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1~2.5V |
| 耗散功率PdPower Dissipation | 200mW/0.2W |
| Description & Applications | 60V N-Channel Enhancement Mode MOSFET FEATURES • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • In compliance with EU RoHS 2002/95/EC directives |
| 描述与应用 | 60V N沟道增强型MOSFET 特点 •先进沟道工艺技术 •高密度电池设计超低导通电阻 •专为电池供电系统，固态继电器驱动：继电器，显示器，灯，电磁阀，记忆等 •符合欧盟RoHS指令2002/95/EC指令 |