| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 16V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 8V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 9Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 90~180 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 100mW/0.1W |
| Description & Applications | Features •NPN Epitaxial planar silicon transistor •low NOISE •High GAIN •high CUTOFF FREQUENCY •VERY Small-SIZED Package |
| 描述与应用 | 特点 •NPN外延平面硅晶体管 •低噪音 •高增益 •高截止频率 •非常小型封装 |